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| NTE253 (NPN) & NTE254 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE253 (NPN) and NTE254 (PNP) are silicon complementary Darlington transistors in a TO126 type case designed for general-purpose amplifier and low-speed switching applications. Features: D High DC Current Gain: hFE = 2000 (Typ) @ IC = 2A D Monolithic Construction with Built-In Base-Emitter Resistors to Limit Leakage Multiplication Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector-Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter-Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.32W/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.23C/W Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter OFF Characteristics Collector-Emitter Breakdown Voltage Collector Cutoff Current V(BR)CEO IC = 50mA, IB = 0, Note 1 ICEO ICBO Emitter Cutoff Current IEBO VCE = 80V, IB = 0 VCE = 80V, IE = 0 VCE = 80V, IE = 0, TC = +100C VBE = 5V, IC = 0 80 - - - - - - - - - - 100 100 500 2.0 V A A A mA Symbol Test Conditions Min Typ Max Unit Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified) Parameter ON Characteristics (Note 1) DC Current Gain NTE253 NTE254 NTE253 & NTE253 Collector-Emitter Saturation Voltage NTE253 NTE254 NTE253 & NTE254 Base-Emitter ON Voltage NTE253 NTE254 NTE253 & NTE254 Dynamic Characteristics Small-Signal Current Gain |hfe| VCE = 3V, IC = 1.5A, f = 1MHz 1.0 - - VBE(on) VCE = 3V, IC = 1.5A VCE = 3V, IC = 2.0A VCE = 3V, IC = 4.0A - - - - - - 2.5 2.5 3.0 V V V VCE(sat) IC = 1.5A, IB = 30mA IC = 2.0A, IB = 40mA IC = 4.0A, IB = 40mA - - - - - 2.5 2.8 3.0 V V V hFE VCE = 3V, IC = 1.5A VCE = 3V, IC = 2A VCE = 3V, IC = 4A 750 750 100 2000 2000 - - - - Symbol Test Conditions Min Typ Max Unit - Note 1. Pulse Test: Pulse Width 300s, Duty Cycle 2% Note 2. NTE253MCP is a matched complementary pair containing 1 each of NTE253 (NPN) and NTE254 (PNP). NTE253 .330 (8.38) Max C B .450 (11.4) Max E .175 (4.45) Max .118 (3.0) Dia .655 (16.6) Max .030 (.762) Dia C B NTE254 E C B .090 (2.28) E .130 (3.3) Max |
Price & Availability of NTE254
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